Study of Cu-Inhibitor State for Post-Chemical Mechanical Polishing Cleaning

被引：1
|
作者：
Harada, Ken [1 ]
Ito, Atsushi [1 ]
Kawase, Yasuhiro [1 ]
Suzuki, Toshiyuki [1 ]
Hara, Makoto [2 ]
Sakae, Rina [2 ]
Kimura, Chiharu [2 ]
Aoki, Hidemitsu [2 ]
机构：
[1] Mitsubishi Chem Corp, Semicond Mat Labs, Kitakyushu, Fukuoka 8060004, Japan
[2] Osaka Univ, Dept Elect Elect & Informat Engn, Suita, Osaka 5650871, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 05期
关键词：
OXALIC-ACID; CMP SLURRIES; COPPER; CORROSION;
D O I：
10.1143/JJAP.50.05EC06
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In order to reduce corrosion on the Cu surface in post-chemical mechanical polishing (CMP) cleaning, controlling the state of inhibitor layers is indispensable. In this study, to investigate the behavior of inhibitor layers in the cleaning process, Cu-benzotriazole (BTA) layers on CuOX were analyzed by electrochemical measurements and surface analysis. Electrochemical measurements revealed that Cu(I)-BTA can prevent corrosion more efficiently than Cu(II)-BTA, and surface analysis revealed that the Cu(I)-BTA layer is thin, whereas the Cu(II)-BTA layer is bulky. The Cu(I)BTA layer is effective in preventing corrosion of the Cu surface. (C) 2011 The Japan Society of Applied Physics
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页数：4
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