Study of Cu-Inhibitor State for Post-Chemical Mechanical Polishing Cleaning

被引：1

作者：

Harada, Ken ^{[1
]}

Ito, Atsushi ^{[1
]}

Kawase, Yasuhiro ^{[1
]}

Suzuki, Toshiyuki ^{[1
]}

Hara, Makoto ^{[2
]}

Sakae, Rina ^{[2
]}

Kimura, Chiharu ^{[2
]}

Aoki, Hidemitsu ^{[2
]}

机构：

[1] Mitsubishi Chem Corp, Semicond Mat Labs, Kitakyushu, Fukuoka 8060004, Japan

[2] Osaka Univ, Dept Elect Elect & Informat Engn, Suita, Osaka 5650871, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 05期

关键词：

OXALIC-ACID; CMP SLURRIES; COPPER; CORROSION;

D O I：

10.1143/JJAP.50.05EC06

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to reduce corrosion on the Cu surface in post-chemical mechanical polishing (CMP) cleaning, controlling the state of inhibitor layers is indispensable. In this study, to investigate the behavior of inhibitor layers in the cleaning process, Cu-benzotriazole (BTA) layers on CuOX were analyzed by electrochemical measurements and surface analysis. Electrochemical measurements revealed that Cu(I)-BTA can prevent corrosion more efficiently than Cu(II)-BTA, and surface analysis revealed that the Cu(I)-BTA layer is thin, whereas the Cu(II)-BTA layer is bulky. The Cu(I)BTA layer is effective in preventing corrosion of the Cu surface. (C) 2011 The Japan Society of Applied Physics

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页数：4

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