Study of Cu-Inhibitor State for Post-Chemical Mechanical Polishing Cleaning

被引：1

作者：

Harada, Ken ^{[1
]}

Ito, Atsushi ^{[1
]}

Kawase, Yasuhiro ^{[1
]}

Suzuki, Toshiyuki ^{[1
]}

Hara, Makoto ^{[2
]}

Sakae, Rina ^{[2
]}

Kimura, Chiharu ^{[2
]}

Aoki, Hidemitsu ^{[2
]}

机构：

[1] Mitsubishi Chem Corp, Semicond Mat Labs, Kitakyushu, Fukuoka 8060004, Japan

[2] Osaka Univ, Dept Elect Elect & Informat Engn, Suita, Osaka 5650871, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 05期

关键词：

OXALIC-ACID; CMP SLURRIES; COPPER; CORROSION;

D O I：

10.1143/JJAP.50.05EC06

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to reduce corrosion on the Cu surface in post-chemical mechanical polishing (CMP) cleaning, controlling the state of inhibitor layers is indispensable. In this study, to investigate the behavior of inhibitor layers in the cleaning process, Cu-benzotriazole (BTA) layers on CuOX were analyzed by electrochemical measurements and surface analysis. Electrochemical measurements revealed that Cu(I)-BTA can prevent corrosion more efficiently than Cu(II)-BTA, and surface analysis revealed that the Cu(I)-BTA layer is thin, whereas the Cu(II)-BTA layer is bulky. The Cu(I)BTA layer is effective in preventing corrosion of the Cu surface. (C) 2011 The Japan Society of Applied Physics

引用

页数：4

共 50 条

[1] Utilizing an α,β-Unsaturated Dicarboxylic Acid for a Defect Initiated Residue Removal During Cu post-Chemical Mechanical Planarization Cleaning
Dudek, Abigail L.
Cahue, Kiana A.
Caridi, Adam T.
Cahue, Tatiana R.
Keleher, Jason J.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2022, 11 (12)
[2] Investigation of Co surface reaction by in situ measurement for chemical mechanical planarization and post-chemical mechanical planarization cleaning
Harada, Ken
Kusano, Tomohiro
Shibata, Toshiaki
Kurosaki, Yasuhiro Kawase
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (07)
[3] Effects of two mild amino acids on benzotriazole residue desorption during cobalt post-chemical mechanical polishing cleaning: Experimental and theoretical studies
Ji, Jinbo
Tan, Baimei
Zhang, Nannan
Ma, Tengda
Xu, Yi
Zhang, Shihao
Shi, Yunhui
Guo, Lei
COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS, 2024, 683
[4] Cleaning methodology of small residue defect with surfactant in copper chemical mechanical polishing post-cleaning
Wei, Kuo-Hsiu
Hung, Chi-Cheng
Wang, Yu-Sheng
Liu, Chuan-Pu
Chen, Kei-Wei
Wang, Ying-Lang
THIN SOLID FILMS, 2016, 618 : 77 - 80
[5] Effect of chelating agent on benzotriazole removal during post copper chemical mechanical polishing cleaning
Miao, Yingxin
Wang, Shengli
Wang, Chenwei
Liu, Yuling
Sun, Mingbin
Chen, Yang
MICROELECTRONIC ENGINEERING, 2014, 130 : 18 - 23
[6] Characterization of Cu chemical mechanical polishing by electrochemical investigations
Zeidler, D
Stavreva, Z
Plotner, M
Drescher, K
MICROELECTRONIC ENGINEERING, 1997, 33 (1-4) : 259 - 265
[7] Formulation of slurry for chemical mechanical polishing of Cu substrates
Hazarika, Jenasree
Patil, Chetana Sudhakar
Rajaraman, Prasanna Venkatesh
MATERIALS TODAY-PROCEEDINGS, 2021, 39 : 1781 - 1785
[8] Degradation of inhibitor in alkaline cleaning solution for post-Cu CMP cleaning
Lai, Shin-Mei
Chen, Yin-Ying
Liu, Chien-Pan
Hsieh, Chien-Kuo
Lin, Jeng-Yu
SURFACE & COATINGS TECHNOLOGY, 2018, 350 : 1080 - 1084
[9] Cleaning mechanisms during post chemical mechanical polishing (CMP) using particle removal of surfactants via a citric acid-based solution
Du, Haoyu
Liu, Renhao
Tan, Baimei
Wang, Fangyuan
Wang, Xiaolong
Han, Xinyu
Zhao, Xinyu
Zhao, Jiadong
COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS, 2024, 697
[10] Study on effect of complexing agents on Co oxidation/dissolution for chemical-mechanical polishing and cleaning process
Kwon, Ohsung
Bae, KiHo
Byun, Jinuk
Lim, Taeho
Kim, Jae Jeong
MICROELECTRONIC ENGINEERING, 2020, 227

← 1 2 3 4 5 →