The effects of annealing temperature on the properties of Bi3.15Nd0.85Ti3O12 thin films

被引：31
作者：
Zheng, X. J. [1 ]
Yi, W. M.
Chen, Y. Q.
Wu, Q. Y.
He, L.
机构：
[1] Xiangtan Univ, Fac Mat & Optoelect Phys, Xiangtan 411105, Hunan, Peoples R China
[2] Xiangtan Univ, Minist Educ, Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Peoples R China
来源：
SCRIPTA MATERIALIA | 2007年 / 57卷 / 08期
基金：
中国国家自然科学基金;
关键词：
BNT thin film; metal-organic decomposition (MOD); x-ray diffraction; ferroelectricity; residual stress;
D O I：
10.1016/j.scriptamat.2007.06.045
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The effects of annealing temperature on microstructure, remnant polarization (2P(r)), leakage current and residual stress in Bi3.15Nd0.85Ti3O12 (BNT) thin films prepared by metal-organic decomposition were studied. The best surface features was observed, and the largest 2P(r) (63.2 mu C cm(-2) under 530 kV cm(-1)) and lowest leakage current (1.32 x 10(-5) A cm(-2) under 125 kV cm(-1)) of the film were obtained with annealing at 700 degrees C. Moreover, the strong residual tensile stress in BNT thin film causes surface fracture and ferroelectric degradation. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：675 / 678
页数：4
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