Formation of silver nanoparticles in thin oxide layer on Si by negative-ion implantation

被引：19
作者：
Arai, N
Tsuji, H [1 ]
Motono, M
Gotoh, Y
Adachi, K
Kotaki, H
Ishikawa, J
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
[2] Sharp Co Ltd, Adv Technol Res Lab, Tenri, Nara 6328567, Japan
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2003年 / 206卷
关键词：
metal nanoparticle; negative ion implantation; oxide film;
D O I：
10.1016/S0168-583X(03)00801-2
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Formation of nanoparticles in a 50-nm-thick SiO2 film on Si was conducted by silver negative ion implantation at 30 keV with various doses, and the state of nanoparticles in the thin oxide film was observed by a cross-sectional scanning TEM. The sample implanted with 1 x 10(15) ions/cm(2) showed nanoparticles with diameter of about 2-3 nn distributed in the middle of the SiO2 film on Si. The location of nanoparticles was in good agreement with the calculated profile by TRIM-DYN. Nanoparticles with various diameters of 4-8 nm formed in samples of 1 x 10(16) and 1 x 10(17) ions/cm(2). The size of silver nanoparticles was found to relate strongly to density of implanted atoms in the layer. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：629 / 633
页数：5
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