Photoresponse uniformity in planar InP/InGaAs avalanche photodiodes

被引：0
作者：
Walker, A. W. [1 ]
Pitts, O. J. [1 ]
机构：
[1] Natl Res Council Canada, Adv Elect & Photon, Ottawa, ON, Canada
来源：
2021 INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD) | 2021年
关键词：
Avalanche photodetector; breakdown; numerical simulation; multiplication width; InP; InGaAs;
D O I：
10.1109/NUSOD52207.2021.9541432
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Numerical simulation of the electric field distribution and photocurrent response of a planar InP/InGaAs avalanche photodiode is presented as a function of varying multiplication width. The Zn dopant diffusion front is obtained by numerically simulating the diffusion process. The simulation results indicate that while a local peak value of the electric field is observed near the device edge, it is not associated with a significant increase in the photocurrent response.
引用
收藏
页码：41 / 42
页数：2
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