Comparison of Ohmic Contact Characteristics of Different Metal on N Type 4H-SiC

被引：0

作者：

Jia, Hujun ^{[1
]}

Yang, Yintang ^{[1
]}

Chai, Changchun ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

来源：

NEW MATERIALS AND ADVANCED MATERIALS, PTS 1 AND 2 | 2011年 / 152-153卷

关键词：

Silicon carbide; Ohmic contact; magnetic sputter; C vacancy; VACANCY;

D O I：

10.4028/www.scientific.net/AMR.152-153.1529

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ohmic contact testing structures have been prepared on n type 4H-SiC layer with different multiple-layer metal, such as Ti/Ni/Au, Cr/Ni/Au and Ni/Ti/Au by magnetic sputter process. Special contact resistances about 10(-6)Omega cm(2) are achieved using TLM measurements. The composition of the alloy areas have been analyzed through XPS and AES, and the results show that the C vacancies induced by carbonides formation are important for ohmic contacts of Ti and Cr to SiC. However, the Ni/SiC structures need a relatively higher alloy temperature, so that the out diffusion of C atoms can offset the lack of Si in the top layer of SiC.

引用

页码：1529 / 1532

页数：4

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