A Full-Range Analytical Current Model for Heterojunction TFET With Dual Material Gate

被引：5

作者：

Guan, Yunhe ^{[1
]}

Li, Zunchao ^{[1
]}

Zhang, Wenhao ^{[1
]}

Zhang, Yefei ^{[1
]}

Liang, Feng ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Shaanxi, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 11期

基金：

美国国家科学基金会;

关键词：

Ambipolar current; dual material gate (DMG); heterojunction; mobile charge; tunnel fielde-ffect transistor (TFET); FIELD-EFFECT TRANSISTOR; DRAIN CURRENT MODEL; TUNNEL FETS; OXIDE STRUCTURE;

D O I：

10.1109/TED.2018.2870171

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this brief, based on the Gaussian quadrature method, we develop an analytical drain current model for the dual-material-gate heterojunction tunnel field-effect transistor (DMG-H-TFET) due to its advantages over the H-TFET and DMG-TFET. This model accounts for the effects of source depletion, drain depletion, ambipolar behavior, and mobile charge both in inversion and accumulation states. The accuracy of the model is validated against TCAD simulation and published data. The dependences of the surface potential, electric field, and drain current on biases and drain doping concentrations are well predicted. Besides, in comparison with the conventional H-TFET, the improvement in drain current and the alleviation of delayed saturation in DMG-H-TFET can also be observed through the proposed model.

引用

页码：5213 / 5217

页数：5

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