Nano Resistive Memory (Re-RAM) Devices and their Applications

被引:25
作者
Dash, Chandra Sekhar [2 ]
Prabaharan, S. R. S. [1 ]
机构
[1] SRM Inst Sci & Technol, SRM Res Inst, Directorate Res, Potheri 603203, Kattankulathur, India
[2] Vellore Inst Technol, Sch Elect Engn, Vandalur Kellambakkam Rd, Chennai 600127, Tamil Nadu, India
关键词
memristor; resistive switching; filamentary conduction; neuromorphic computing; DRIVEN ION MIGRATION; SWITCHING CHARACTERISTICS; NEGATIVE-RESISTANCE; CONDUCTIVE FILAMENT; MEMRISTIVE DEVICES; AG2S MEMRISTORS; THIN-FILMS; BIPOLAR; MODEL; RERAM;
D O I
10.1515/rams-2019-0014
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Use of solid state ionic conductors the so-called Solid Electrolytes has brought new impetus to the field of solid state memories namely resistive random access memory (Re-RAM). In this review article, to begin we present the detailed understanding on the basics of solid electrolytes. Later, the same has been reviewed focusing on its application in novel solid state memory applications. Few examples of solid electrolytes are considered and their impact on the state-of-art research in this domain is discussed in detail. An in-depth analysis on the fundamentals of Resistive switching mechanism involved in various classes of Memristive devices viz., Electrochemical Metallization Memories (ECM) and Valence change Memories (VCM). A few important applications of Memristors such as Neuristor and artificial synapse in neuromorphic computing are reviewed as well. Finally, the most anticipated energy efficient battery-like cells as artificial synapse in brain-inspired computing is also covered.
引用
收藏
页码:248 / 270
页数:23
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