Structural determination of indium-induced Si(111) reconstructed surfaces by LEED analysis:: (√3x√3)R30° and (4x1) -: art. no. 195410

Two indium-induced Si(111) reconstructed surfaces, the (root3xroot3)R30degrees and the (4x1) structures, were examined by dynamical low-energy electron diffraction I-V analysis. As suggested in former studies, the T-4 model of the (root3xroot3)R30degrees structure showed the best agreement with the experiments. For the (4x1) structure, we examined 45 models and selected the model proposed by a surface x-ray diffraction study as the most appropriate structure. The low-temperature phase, whose diffraction pattern is (8x1)-p1g1 with half-order streaks, has I-V curves almost identical to those of the (4x1) phase. Therefore, the structural changes accompanying a phase transition between the (4x1) and (8x1)-p1g1 structures should be very small.