A prospect of grain boundary engineering for electronic properties in polycrystalline materials

被引：6
作者：
Fionova, L
Watanabe, T
Lisovski, Y
机构：
[1] Lab. of Mat. Des./Interface Eng., Faculty of Engineering
[2] Inst. of Microelectronics Technology, 142432 Chernogolovka, Moscow Dist.
[3] Lab. of Mat. Des./Interface Eng., Faculty of Engineering, Tohoku University, Aoba-ku, Sendai, Miyagi-ken 980-77, Aramaki
[4] Center of Computer Materials
来源：
ISIJ INTERNATIONAL | 1996年 / 36卷 / 06期
关键词：
grain boundaries; structure of polycrystal; electrical properties; magnetic properties; semi-conductors; thin films;
D O I：
10.2355/isijinternational.36.613
中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
Recent studies of electronic properties of individual grain boundaries (GBs) have been reviewed in relation to the character and structure of GBs in metals, semiconductors and superconducting materials. The effects of grain assemblage and cooperative phenomena in GB ensemble on electrical and magnetic properties have been also discussed. Using these results as a base, possible ways for GB design and control and prospective of GB engineering are given.
引用
收藏
页码：613 / 623
页数：11
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