Materials design of p-type transparent conducting oxides of delafossite CuAlO2 by super-cell FLAPW method

被引:35
作者
Koyanagi, T
Harima, H
Yanase, A
Katayama-yoshida, H
机构
[1] Osaka Univ, Inst Sci & Ind Res, Dept Condensed Matter Phys, Nanosci & Nanotechnol Ctr, Osaka 5670047, Japan
[2] Osaka Univ, ISIR, Nanosci & Nanotechnol Ctr, Dept Computat Nanomat Design, Osaka 5670047, Japan
关键词
ab initio calculations;
D O I
10.1016/S0022-3697(03)00078-7
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We propose a new crystal growth method and a new valence control method to fabricate a low-resistive p-type and transparent conducting oxides of Delafossite CuAlO2 based on ab initio electronic structure calculation using a super-cell FLAPW method. We propose a Cu-vacancy-acceptor doping method by decreasing a Cu-vapor pressure in order to increase a Cu-vacancy concentration. We also propose the Mg- or Be-impurity doping method at the Al-site using the thermal non-equilibrium crystal-growth method with extreme conditions in MBE or MOCVD by decreasing an Al-vapor pressure and avoiding the Mg- or Be-atom doping at the Cu-site by increasing a Cu-vapor pressure. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1443 / 1446
页数:4
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