Total Ionizing Dose Effects of 1 Mb HfO2-based Resistive-Random-Access-Memory

被引：0
作者：
Bi, Jinshun [1 ,2 ]
Duan, Yuan [1 ]
Zhang, Feng [1 ]
Liu, Ming [1 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
2018 25TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA) | 2018年
基金：
中国国家自然科学基金;
关键词：
Total Ionizing Dose (TID); Hafnium dioxide; RRAM; Bit errors; Leakage current;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Total ionizing dose (TID) induced upset errors in HfO2-based resistive-random-access-memory (RRAM) with 1T1R storage cell structure are investigated. Radiation-induced leakage current in the access transistors on the same bit-lines causes a read decision failure and bit errors observed during TID irradiation experiments. This is verified by testkeys and HSPICE simulations based on the actual circuit structure of the 1 Mb RRAM.
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