Contact angle measurements:: an empirical diagnostic method for evaluation of thin film solar cell absorbers (CuInS2)

被引：54

作者：

Lokhande, CD ^{[1
]}

Barkschat, A

Tributsch, H

机构：

[1] Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, Maharashtra, India

[2] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2003年 / 79卷 / 03期

关键词：

CuInS2; absorbers; solar cells; contact angle measurement; KCN treatment; conversion efficiency; photocurrent mapping; SI(111) SURFACES; WETTABILITY; HYSTERESIS; METAL;

D O I：

10.1016/S0927-0248(02)00413-0

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

An empirical diagnostic method for the evaluation of solar cell grade CuInS2 absorbers has been developed. The method involves the measurement of the contact angle between water and the CuInS2 absorber before fabrication of a solar cell. The contact angle is expected to depend upon local inhomogeneity, chemical composition and surface morphology of the CuInS2 absorber. The variation of these factors on the surface is supported with scanning electron micrographs, chemical analyses, laser scanning photocurrent mapping of various CuInS2 absorbers and measurements of the solar cell performance. The contact angle has been found to be different at different places on the CuInS2 surface. Empirically, it was found that for high conversion efficiency solar cells (> 8-10.5%), the contact angle on CuInS2 absorbers ranges between 53degrees and 63degrees. For low conversion efficiency solar cells (< 6%), it is between 48degrees and 50degrees. Therefore, it is seen that contact angle measurements on CuInS2 absorbers can be used to assess the quality of CuInS2 absorbers prior to solar cell fabrication. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：293 / 304

页数：12

共 18 条

[1] Chemical treatment effect of Si(111) surfaces in F-based aqueous solutions [J].

Adachi, S ;

Arai, T ;

Kobayashi, K .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (09) :5422-5426

[2]

ADAMSON AW, 1982, PHYSICAL CHEM SURFAC, pCH2

[3] Wettability of porous surfaces. [J].

Cassie, ABD ;

Baxter, S .

TRANSACTIONS OF THE FARADAY SOCIETY, 1944, 40 :0546-0550

[4]

*DAT INST GMBH, 2001, OP MAN OCA 30, P6

[5] Wettability of transition metal oxide surfaces [J].

Feng, AG ;

McCoy, BJ ;

Munir, ZA ;

Cagliostro, D .

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1998, 242 (1-2) :50-56

[6] CHARACTERIZATION OF THERMALLY GROWN SIO2 SURFACES BY CONTACT ANGLE MEASUREMENTS [J].

FRIESER, RG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (05) :669-672

[7] Chemically cleaned InP(100) surfaces in aqueous HF solutions [J].

Kikuchi, D ;

Adachi, S .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 76 (02) :133-138

[8] Efficient CuInS2 thin-film solar cells prepared by a sequential process [J].

Klaer, J ;

Bruns, J ;

Henninger, R ;

Seimer, K ;

Klenk, R ;

Ellmer, K ;

Bräunig, D .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (12) :1456-1458

[9] The effect of liquid properties to contact angle hysteresis [J].

Lam, CNC ;

Kim, N ;

Hui, D ;

Kwok, DY ;

Hair, ML ;

Neumann, AW .

COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS, 2001, 189 (1-3) :265-278

[10] Improvement of high temperature water rinsing and drying for HF-last wafer cleaning [J].

Li, L ;

Bender, H ;

Zou, G ;

Mertens, PW ;

Meuris, MA ;

Heyns, MM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (01) :233-237

← 1 2 →