Resonant-cavity-enhanced avalanche photodiodes grown by molecular beam epitaxy on InP for detection near 1.55 μm

被引：9

作者：

Anselm, KA ^{[1
]}

Nie, H ^{[1
]}

Lenox, C ^{[1
]}

Hansing, C ^{[1
]}

Campbell, JC ^{[1
]}

Streetman, BG ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 03期

关键词：

D O I：

10.1116/1.589959

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the epitaxial growth, fabrication, and characterization of a resonant-cavity-enhanced separate-absorption and multiplication avalanche photodiode capable of detecting light at 1.55 mu m. The device is grown by molecular beam epitaxy with In0.53GaxAl0.47-xAs layers lattice matched to InP. This detector has exhibited a peak external quantum efficiency greater than 70%, a gain of 8, and a dark current of only 50 nA at 90% of breakdown for a 100-mu m-diam diode. (C) 1998 American Vacuum Society.

引用

页码：1426 / 1429

页数：4

共 13 条

[1] A resonant-cavity, separate-absorption-and-multiplication, avalanche photodiode with low excess noise factor [J].