Properties of rf-sputtered indium-tin-oxynitride thin films

被引：41

作者：

Aperathitis, E

Bender, M

Cimalla, V

Ecke, G

Modreanu, M

机构：

[1] Fdn Res & Technol Hellas, Inst Elect Struct & Laser, Microelect Res Grp, Iraklion, Crete, Greece

[2] Appl Films GmbH & Co KG, D-63755 Alzenau, Germany

[3] Tech Univ Ilmenau, Ctr Micro & Nanotechnol, D-98684 Ilmenau, Germany

[4] Natl Univ Ireland Univ Coll Cork, Natl Microelect Res Ctr, Photon Grp, Cork, Ireland

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 02期

关键词：

D O I：

10.1063/1.1582368

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Indium-tin-oxide (ITO) and indium-tin-oxynitride (ITON) thin films have been fabricated by rf-sputtering in plasma containing Ar or a mixture of Ar and N-2, respectively. The structural, electrical and optical properties of ITON films were examined and compared with those of ITO films. The microstructure of ITON films was found to be dependent on the nitrogen concentration in the plasma. Increasing the amount of nitrogen in the plasma increased the resistivity and reduced the carrier concentration and mobility of the films. The electrical properties of the ITON films improved after annealing. The absorption edge of the ITON films deposited in pure N-2 plasma was shifted towards higher energies and showed reduced infrared reflectance compared to the respective properties of ITO films. The potential of indium-tin-oxynitride films for use as a transparent conductive material for optoelectronic devices is addressed. (C) 2003 American Institute of Physics.

引用

页码：1258 / 1266

页数：9

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