Simulation analysis of UV-A band LEDs with BGaN single quantum well using SiC substrate for medical applications

被引：0
作者：
Manikandan, M. [1 ]
Nirmal, D. [2 ]
Dhivyasri, G. [1 ]
Arivahagan, L. [3 ]
Ajayan, J. [4 ]
Chandru, R. [3 ]
Rajeshwaran, K. [3 ]
机构：
[1] KPR Inst Engn & Technol, Dept Elect & Commun Engn, Coimbatore, Tamil Nadu, India
[2] Karunya Inst Technol & Sci, Dept Elect & Commun Engn, Coimbatore, Tamil Nadu, India
[3] Sri Ramakrishna Engn Coll, Dept Elect & Commun Engn, Coimbatore, Tamil Nadu, India
[4] SR Univ, Dept Elect & Commun Engn, Telugana, India
来源：
ICSPC'21: 2021 3RD INTERNATIONAL CONFERENCE ON SIGNAL PROCESSING AND COMMUNICATION (ICPSC) | 2021年
关键词：
LED; Boron; AlGaN; GaN; Quantum Efficiency; LIGHT-EMITTING-DIODES; CUBIC FORM; NITRIDE; QUALITY;
D O I：
10.1109/ICSPC51351.2021.9451764
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of Aluminum Gallium Nitride (AlGaN) Light Emitting Diode (LED) with Boron doped GaN well (BGaN) optical performance are examined in the research article. The investigation results are obtained by adopting physical simulator known as Technology Computer Aided Design (TCAD). BGaN LEDs with single quantum Wells (QW) are measured with Silicon carbide (SiC) substrate. The models such as Auger recombination, polarization and radiative recombination's are utilized for the simulations. The obtained simulation results using TCAD specifies that quantum efficiency and luminous power of BGaN LEDs are efficient which falls under the wavelength of 360nm (UV-A band) and best suitable device for medical applications such as sterilization, bacterial removal etc.
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收藏
页码：312 / 314
页数：3
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