UV-Ozone Interfacial Modification in Organic Transistors for High-Sensitivity NO2 Detection

被引：113

作者：

Huang, Wei ^{[1
,2
]}

Zhuang, Xinming ^{[1
]}

Melkonyan, Ferdinand S. ^{[2
]}

Wang, Binghao ^{[2
]}

Zeng, Li ^{[3
,4
]}

Wang, Gang ^{[2
]}

Han, Shijiao ^{[1
]}

Bedzyk, Michael J. ^{[3
,4
]}

Yu, Junsheng ^{[1
]}

Marks, Tobin J. ^{[2
]}

Facchetti, Antonio ^{[2
,5
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Optoelect Informat, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China

[2] Northwestern Univ, Dept Chem, 2145 Sheridan Rd, Evanston, IL 60208 USA

[3] Northwestern Univ, Dept Mat Sci & Engn, 2220 Campus Dr, Evanston, IL 60208 USA

[4] Northwestern Univ, Appl Phys Program, 2220 Campus Dr, Evanston, IL 60208 USA

[5] Flexterra Inc, 8025 Lamon Ave, Skokie, IL 60077 USA

来源：

ADVANCED MATERIALS | 2017年 / 29卷 / 31期

基金：

美国国家科学基金会;

关键词：

interface trap; nitrogen dioxide sensors; organic thin-film transistors; UV-ozone; FIELD-EFFECT TRANSISTORS; THIN-FILM-TRANSISTOR; AMMONIA GAS SENSOR; NITROGEN-DIOXIDE NO2; COPPER PHTHALOCYANINE; DIELECTRIC LAYER; ROOM-TEMPERATURE; ENERGY-CONSUMPTION; HYBRID; MECHANISM;

D O I：

10.1002/adma.201701706

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A new type of nitrogen dioxide (NO2) gas sensor based on copper phthalocyanine (CuPc) thin film transistors (TFTs) with a simple, low-cost UV-ozone (UVO)-treated polymeric gate dielectric is reported here. The NO2 sensitivity of these TFTs with the dielectric surface UVO treatment is approximate to 400x greater for [NO2] = 30 ppm than for those without UVO treatment. Importantly, the sensitivity is approximate to 50x greater for [NO2] = 1 ppm with the UVO-treated TFTs, and a limit of detection of approximate to 400 ppb is achieved with this sensing platform. The morphology, microstructure, and chemical composition of the gate dielectric and CuPc films are analyzed by atomic force microscopy, grazing incident X-ray diffraction, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy, revealing that the enhanced sensing performance originates from UVO-derived hydroxylated species on the dielectric surface and not from chemical reactions between NO2 and the dielectric/semiconductor components. This work demonstrates that dielectric/semiconductor interface engineering is essential for readily manufacturable high-performance TFT-based gas sensors.

引用

页数：11

共 71 条

[1] NO2 Detection and Real-Time Sensing with Field-Effect Transistors [J].