Persistent infrared photoconductivity in InAs/GaAs structures with quantum dot layer

被引：2
|
作者：
Kulbachinskii, V. A.
Kytin, V. G.
Rogozin, V. A.
Zvonkov, B. N.
Dashevsky, Z.
Casian, V. A.
机构：
[1] Moscow MV Lomonosov State Univ, Low Temp Phys Dept, Moscow 119992, Russia
[2] NI Lobachevskii State Univ, Physicotech Res Inst, Nizhnii Novgorod 603600, Russia
[3] Ben Gurion Univ Negev, Dept Mat Engn, IL-84105 Beer Sheva, Israel
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2007年 / 39卷 / 01期
基金：
俄罗斯基础研究基金会;
关键词：
quantum dots; persistent infra-red photoconductivity; GaAs; transport phenomena; Shubnikov-de Haas effect;
D O I：
10.1016/j.physe.2006.11.001
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Persistent lateral infra-red photoconductivity has been observed and investigated in InAs/GaAs layers with quantum dots (QD) in the temperature range 4.2 < T< 300 K. The relaxation of photoconductivity was logarithmic in a certain time range after switching off the light, while the rate of the decay of photoconductivity increases strongly when temperature increases. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：1 / 7
页数：7
相关论文
共 50 条
  • [31] Enhanced radiation hardness of InAs/GaAs quantum dot structures
    Sobolev, NA
    Cavaco, A
    Carmo, MC
    Grundmann, M
    Heinrichsdorff, F
    Bimberg, D
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2001, 224 (01): : 93 - 96
  • [32] Growth and optical properties of InAs/GaAs quantum dot structures
    Trofimov, VI
    Park, HS
    Kim, JI
    APPLIED SURFACE SCIENCE, 2004, 226 (1-3) : 45 - 51
  • [33] Growth and characterization of bilayer InAs/GaAs quantum dot structures
    Liang, B. L.
    Wang, Zh. M.
    Mazur, Yu. I.
    Strelchuck, V. V.
    Salamo, G. J.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (10): : 2403 - 2410
  • [34] Investigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectors
    Ivanov, Ts
    Donchev, V.
    Germanova, K.
    Tellaleva, Ts
    Borissov, K.
    Hongpinyo, V.
    Vines, P.
    David, J. P. R.
    Ooi, B. S.
    17TH INTERNATIONAL SUMMER SCHOOL ON VACUUM, ELECTRON, AND ION TECHNOLOGIES (VEIT 2011), 2012, 356
  • [35] Negative differential infrared photoconductivity in quantum-dot structures
    Ryzhii, V
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 12 (1-4): : 868 - 871
  • [36] Photoconductivity Resonance Tunneling Spectroscopy of the Electron States in the InAs/GaAs Quantum Dot Heterostructures
    Ivina, N. L.
    Orlov, M. L.
    Volkova, N. S.
    INTERNATIONAL JOURNAL OF NANOSCIENCE, 2019, 18 (3-4)
  • [37] Photoconductivity of an InAs/GaAs self-assembled quantum dot photoconductive THz antenna
    Yadav, Amit
    Gorodetsky, Andrei
    Avrutin, Eugene
    Fedorova, Ksenia A.
    Rafailov, Edik U.
    2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC), 2017,
  • [38] Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures
    Serhiy V. Kondratenko
    Sviatoslav A. Iliash
    Oleg V. Vakulenko
    Yuriy I. Mazur
    Mourad Benamara
    Euclydes Marega
    Gregory J. Salamo
    Nanoscale Research Letters, 2017, 12
  • [39] Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures
    Kondratenko, Serhiy V.
    Iliash, Sviatoslav A.
    Vakulenko, Oleg V.
    Mazur, Yuriy I.
    Benamara, Mourad
    Marega, Euclydes, Jr.
    Salamo, Gregory J.
    NANOSCALE RESEARCH LETTERS, 2017, 12
  • [40] InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer
    Lee, Chi-Sen
    Chang, Fu-Yu
    Liu, Day-Shan
    Lin, Hao-Hsiung
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (8 A): : 6271 - 6274
12345