Fabrication and characterization of a dynamically flat high resolution micro-scanner

被引:39
作者
Hsu, S. [1 ]
Klose, T. [1 ]
Drabe, C. [1 ]
Schenk, H. [1 ]
机构
[1] Fraunhofer Inst Photon Microsyst IPMS, D-01109 Dresden, Germany
来源
JOURNAL OF OPTICS A-PURE AND APPLIED OPTICS | 2008年 / 10卷 / 04期
关键词
micromirror; dynamic deformation; display scanner; backside reinforcement; MEMS;
D O I
10.1088/1464-4258/10/4/044005
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We present an ultra flat high frequency micro-scanner for high resolution laser projection applications. The scanner is fabricated in silicon-on-insulator wafers with a 30 mu m thick device layer. A backside island is constructed behind the mirror plate to improve the rigidity. The backside island is done with a deep reactive ion etching (DRIE)-tetramethylammonium hydroxide (TMAH) combination process to achieve a height of 86 mu m with good uniformity (4% within-wafer non-uniformity). The dynamic deformation is measured with a stroboscopic interferometer. The 1 mm diameter mirror plate has a root-mean-square deformation of less than 27 nm if operated at 30.84 kHz and a mechanical scan angle of +/- 10 degrees.. The dynamic flatness performance of the device exceeds the optical quality requirement of <lambda/10 deformation. The modulation transfer function of the scanner is calculated to demonstrate the resolution improvement from a scanner without backside reinforcement. With a diameter-scan angle product of 10 and a good dynamic flatness, the scanner is capable of performing the horizontal scanning (800 pixels) for an SVGA quality laser projection display.
引用
收藏
页数:8
相关论文
共 17 条
[1]   DYNAMIC MIRROR DISTORTIONS IN OPTICAL SCANNING [J].
BROSENS, PJ .
APPLIED OPTICS, 1972, 11 (12) :2987-&
[2]   Fabrication of out-of-plane curved surfaces in Si by utilizing RIE lag [J].
Chou, TKA ;
Najafi, K .
FIFTEENTH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST, 2002, :145-148
[3]   Geometrical pattern effect on silicon deep etching by an inductively coupled plasma system [J].
Chung, CK .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2004, 14 (04) :656-662
[4]   CONDUCTANCE CONSIDERATIONS IN THE REACTIVE ION ETCHING OF HIGH ASPECT RATIO FEATURES [J].
COBURN, JW ;
WINTERS, HF .
APPLIED PHYSICS LETTERS, 1989, 55 (26) :2730-2732
[5]  
Conant R. A., 2000, Technical Digest. Solid-State Sensor and Actuator Workshop (TRF Cat. No.00TRF-0001), P6
[6]   Stroboscopic interferometer system for dynamic MEMS characterization [J].
Hart, MR ;
Conant, RA ;
Lau, KY ;
Muller, RS .
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2000, 9 (04) :409-418
[7]   RIE lag in high aspect ratio trench etching of silicon [J].
Jansen, H ;
deBoer, M ;
Wiegerink, R ;
Tas, N ;
Smulders, E ;
Neagu, C ;
Elwenspoek, M .
MICROELECTRONIC ENGINEERING, 1997, 35 (1-4) :45-50
[8]  
JI CH, 2000, J MICROELECTROMECH S, V9, P409
[9]   Pattern shape effects and artefacts in deep silicon etching [J].
Kiihamäki, J ;
Franssila, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (04) :2280-2285
[10]   Depth and profile control in plasma etched MEMS structures [J].
Kiihamäki, J ;
Kattelus, H ;
Karttunen, J ;
Franssila, S .
SENSORS AND ACTUATORS A-PHYSICAL, 2000, 82 (1-3) :234-238