Damage threshold influenced by polishing imperfection distribution under 355-nm laser irradiation

A systematic interpretation of laser-induced damage in the nanosecond regime is realized with a defect distribution buried inside the redeposited layer arising from a polishing process. Under the 355-nm laser irradiation, the size dependence of the defect embedded in the fused silica can be illustrated through the thermal conduction model. Considering CeO2 as the major initiator, the size distribution with the power law model is determined from the damage probability statistics. To verify the accuracy of the size distribution, the ion output scaling with depth for the inclusion element is obtained with the secondary ion mass spectrometer. For CeO2 particulates in size of the depth interval with ion output satisfied in the negative exponential form, the corresponding density is consistent with that of the identical size in the calculated size distribution. This coincidence implies an alternative method for the density analysis of photoactive imperfections within optical components at the semi-quantitative level based on the laser damage tests.