Low resistance, nonalloyed ohmic contacts to InGaAs

被引：49
作者：
Crook, Adam M. [1 ]
Lind, Erik
Griffith, Zach
Rodwell, Mark J. W.
Zimmerman, Jeremy D.
Gossard, Arthur C.
Bank, Seth R.
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[3] Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 19期
关键词：
D O I：
10.1063/1.2806235
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report extremely low specific contact resistivity (rho(c)) nonalloyed Ohmic contacts to n-type In0.53Ga0.47As, lattice matched to InP. Contacts were formed by oxidizing the semiconductor surface through exposure to ultraviolet-generated ozone, subsequently immersing the wafer in ammonium hydroxide (NH4OH, 14.8 normality), and finally depositing either Ti/Pd/Au contact metal by electron-beam evaporation or TiW contact metal by vacuum sputtering. Ti/Pd/Au contacts exhibited rho(c) of (0.73 +/- 0.44) Omega mu m(2)-i.e., (7.3 +/- 4.4)x10(-9) Omega cm(2)-while TiW contacts exhibited rho(c) of (0.84 +/- 0.48) Omega mu m(2). The TiW contacts are thermally stable, showing no observable degradation in resistivity after a 500 degrees C annealing of 1 min duration.
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页数：3
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