Low resistance, nonalloyed ohmic contacts to InGaAs

被引：49

作者：

Crook, Adam M. ^{[1
]}

Lind, Erik

Griffith, Zach

Rodwell, Mark J. W.

Zimmerman, Jeremy D.

Gossard, Arthur C.

Bank, Seth R.

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 19期

关键词：

D O I：

10.1063/1.2806235

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report extremely low specific contact resistivity (rho(c)) nonalloyed Ohmic contacts to n-type In0.53Ga0.47As, lattice matched to InP. Contacts were formed by oxidizing the semiconductor surface through exposure to ultraviolet-generated ozone, subsequently immersing the wafer in ammonium hydroxide (NH4OH, 14.8 normality), and finally depositing either Ti/Pd/Au contact metal by electron-beam evaporation or TiW contact metal by vacuum sputtering. Ti/Pd/Au contacts exhibited rho(c) of (0.73 +/- 0.44) Omega mu m(2)-i.e., (7.3 +/- 4.4)x10(-9) Omega cm(2)-while TiW contacts exhibited rho(c) of (0.84 +/- 0.48) Omega mu m(2). The TiW contacts are thermally stable, showing no observable degradation in resistivity after a 500 degrees C annealing of 1 min duration.

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