Non-chemical fluorination of hexagonal boron nitride by high-energy ion irradiation

被引：9

作者：

Entani, Shiro ^{[1
]}

Larionov, Konstantin V. ^{[2
,3
,8
]}

Popov, Zakhar I. ^{[2
,4
]}

Takizawa, Masaru ^{[5
]}

Mizuguchi, Masaki ^{[6
]}

Watanabe, Hideo ^{[7
]}

Li, Songtian ^{[1
]}

Naramoto, Hiroshi ^{[1
]}

Sorokin, Pavel B. ^{[1
,2
,3
]}

Sakai, Seiji ^{[1
]}

机构：

[1] Natl Inst Quantum & Radiol Sci & Technol, Quantum Beam Sci Res Directorate, Takasaki, Gunma 3701292, Japan

[2] Natl Univ Sci & Technol MISiS, Moscow 119049, Russia

[3] Moscow Inst Phys & Technol, 9 Inst Skii Per, Dolgoprudnyi 141700, Moscow Region, Russia

[4] RAS, Emanuel Inst Biochem Phys, 4 Kosygina St, Moscow 199339, Russia

[5] Ritsumeikan Univ, Fac Sci & Engn, Dept Phys Sci, Kusatsu, Shiga 5258577, Japan

[6] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808570, Japan

[7] Kyushu Univ, Appl Mech Res Inst, Kasuga, Fukuoka 8168580, Japan

[8] Technol Inst Superhard & Novel Carbon Mat, Moscow 108840, Russia

来源：

NANOTECHNOLOGY | 2020年 / 31卷 / 12期

关键词：

hexagonal boron nitride; heteroatom doping; high-energy ion irradiation; near edge x-ray absorption fine structure; ab initio calculation; INITIO MOLECULAR-DYNAMICS; ABSORPTION FINE-STRUCTURE; SPIN-POLARIZATION; GRAPHENE; NANOTUBES; SEMICONDUCTORS; HYDROGENATION; METALS;

D O I：

10.1088/1361-6528/ab5bcc

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Two-dimensional materials such as hexagonal boron nitride (h-BN) and graphene have attracted wide attention in nanoelectronics and spintronics. Since their electronic characteristics are strongly affected by the local atomic structure, the heteroatom doping could allow us to tailor the electronic and physical properties of two-dimensional materials. In this study, a non-chemical method of heteroatom doping into h-BN under high-energy ion irradiation was demonstrated for the LiF/h-BN/Cu heterostructure. Spectroscopic analysis of chemical states on the relevant atoms revealed that 6% +/- 2% fluorinated h-BN is obtained by the irradiation of 2.4 MeV Cu2+ ions with the fluence up to 1014 ions cm(-2). It was shown that the high-energy ion irradiation leads to a single-sided fluorination of h-BN by the formation of the fluorinated sp(3)-hybridized BN.

引用

页数：9

共 52 条

[11] ELECTRONIC-STRUCTURE OF CU2O AND CUO [J].