Enabling thin-film transistor technologies and the device metrics that matter

被引：63
作者：
Paterson, Alexandra F. [1 ,2 ]
Anthopoulos, Thomas D. [1 ,2 ]
机构：
[1] KAUST, Div Phys Sci & Engn, Thuwal 239556900, Saudi Arabia
[2] KAUST Solar Ctr, Thuwal 239556900, Saudi Arabia
来源：
NATURE COMMUNICATIONS | 2018年 / 9卷
关键词：
D O I：
10.1038/s41467-018-07424-2
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
The field-effect transistor kickstarted the digital revolution that propelled our society into the information age. One member of the now large family of field-effect devices is the thin-film transistor (TFT), best known for its enabling role in modern flat-panel displays. TFTs can be used in all sorts of innovative applications because of the broad variety of materials they can be made from, which give them diverse electrical and mechanical characteristics. To successfully utilize TFT technologies in a variety of rapidly emerging applications, such as flexible, stretchable and transparent large-area microelectronics, there are a number of metrics that matter.
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