Band gap engineering based on MgxZn1-xO and CdyZn1-yO ternary alloy films

被引：624

作者：

Makino, T ^{[1
]}

Segawa, Y

Kawasaki, M

Ohtomo, A

Shiroki, R

Tamura, K

Yasuda, T

Koinuma, H

机构：

[1] RIKEN, Inst Phys & Chem Res, Photodynam Res Ctr, Sendai, Miyagi 9800845, Japan

[2] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Yokohama, Kanagawa 2268502, Japan

[3] Ishinomaki Senshu Univ, Sch Sci & Engn, Ishinomaki 9868580, Japan

[4] Tokyo Inst Technol, Sch Sci & Engn, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 09期

关键词：

D O I：

10.1063/1.1350632

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe the structural and optical properties of II-VI oxide alloys, MgxZn1-xO and CdyZn1-yO, grown by pulsed-laser deposition. Single-phase alloyed films of (Mg,Zn)O and (Cd,Zn)O with c-axis orientations were epitaxially grown on sapphire (0001) substrates. The maximum magnesium and cadmium concentrations (x = 0.33 and y = 0.07, respectively) were significantly larger than the thermodynamic solubility limits. The band gap energies systematically changed from 3.0 (y = 0.07) to 4.0 eV (x = 0.33) at room temperature. The photoluminescence peak energy deduced at 4.2 K could be tuned from 3.19 to 3.87 eV by using Cd0.07Zn0.93O and Mg0.33Zn0.67O at both ends, respectively. The lattice constants of the a axis were monotonically increasing functions of the concentrations of both alloys. The exciton-phonon coupling strength was determined in Cd0.01Zn0.99O grown on a lattice-matched ScAlMgO4 substrate. (C) 2001 American Institute of Physics.

引用

页码：1237 / 1239

页数：3

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