Growth and physical properties of sol-gel derived Co doped ZnO thin film

被引：28

作者：

Kim, Ki-Chul

Kim, Eung-Kwon

Kim, Young-Sung ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Adv Mat Proc Informat Technol, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Inst Basic Sci, Phys Res Div BK21, Suwon 440746, South Korea

[3] Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon 440746, South Korea

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2007年 / 42卷 / 1-6期

关键词：

sol-gel; Zn1-xCoxO thin film; dilute magnetic semiconductor (DMS);

D O I：

10.1016/j.spmi.2007.04.062

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Zn1-xCoxO films were grown on glass by sol-gel spin coating process. The Zn1-xCoxO thin films with 10 at.% Co were highly c-axis oriented. The electrical resistivity of the films at 10 at.% Co had the lowest value due to the highest c-axis orientation. XPS and AGM analyses indicated that Co metal clusters weren't formed, and the ferromagnetism was appeared at room temperature. The characteristics of the electrical resistivity and room temperature ferromagnetism of sol-gel derived Zn1-xCoxO films suggest a potential application to dilute magnetic semiconductor devices. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：246 / 250

页数：5

共 4 条

[1]

[Anonymous], HDB XRAY PHOTOELECTR

[2] Light-induced ferromagnetism in III-V-based diluted magnetic semiconductor heterostructures [J].