Spin polarized tunneling in a ferromagnetic Zener diode

被引：4

作者：

Comesana, E. ^{[1
]}

Gehring, G. A.

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[2] Univ Santiago de Compostela, Dept Elect & Computac, Santiago De Compostela 15782, Spain

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 14期

关键词：

D O I：

10.1063/1.2795335

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Calculations of the tunneling current as a function of voltage for a Zener diode where both sides are ferromagnetic have been performed. The current is evaluated as a function of the voltage and of the magnetization on each side of the diode. The tunneling magnetoresistance is analyzed. Two cases are considered, one that corresponds to Mn doped GaAs in which the ferromagnetism is stronger on the p side of the diode and the other that corresponds to ZnO where there are likely to be many more carriers on the n side of the diode. (c) 2007 American Institute of Physics.

引用

页数：3

共 14 条

[1] Ferromagnetism in doped thin-film oxide and nitride semiconductors and dielectrics [J].

Chambers, Scott A. .

SURFACE SCIENCE REPORTS, 2006, 61 (08) :345-381

[2]

DORPE PV, 2004, APPL PHYS LETT, V84, P3495

[3]

GEHRING G, 2006, SPINTRONIC MAT TECHN, P3

[4] Electrical transport in Mn-doped GaAs pn-diodes [J].

Holmberg, H. ;

Lebedeva, N. ;

Novikov, S. ;

Kuivalainen, P. ;

Malfait, M. ;

Moshchalkov, V. V. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (03) :791-804

[5] Large magnetoresistance in a ferromagnetic GaMnAs/GaAs Zener diode [J].

Holmberg, H ;

Lebedeva, N ;

Novikov, S ;

Ikonen, J ;

Kuivalainen, P ;

Malfait, M ;

Moshchalkov, VV .

EUROPHYSICS LETTERS, 2005, 71 (05) :811-816

[6]

HU XH, 2006, NEW J PHYS, V8, P135

[7] TUNNELING BETWEEN FERROMAGNETIC-FILMS [J].

JULLIERE, M .

PHYSICS LETTERS A, 1975, 54 (03) :225-226

[8] Theory of ferromagnetic (III,Mn)V semiconductors [J].

Jungwirth, T. ;

Sinova, Jairo ;

Masek, J. ;

Kucera, J. ;

MacDonald, A. H. .

REVIEWS OF MODERN PHYSICS, 2006, 78 (03) :809-864

[9] THEORY OF TUNNELING [J].

KANE, EO .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) :83-+

[10] Chemical manipulation of High-TC ferromagnetism in ZnO diluted magnetic semiconductors -: art. no. 147209 [J].

Kittilstved, KR ;

Norberg, NS ;

Gamelin, DR .

PHYSICAL REVIEW LETTERS, 2005, 94 (14)

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