Identification of a deposition rate profile subspace corresponding to spatially-uniform films in planetary CVD reactors: a new criterion for uniformity control

被引:5
作者
Adomaitis, RA [1 ]
机构
[1] Univ Maryland, Dept Chem Engn, Syst Res Inst, College Pk, MD 20742 USA
关键词
spatially-uniform films; CVD reactor; uniformity control;
D O I
10.1016/j.compchemeng.2004.09.020
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
A means of identifying a subspace in the space of all deposition profile functions is developed, where the subspace spans all spatially nonuniform deposition profiles that result in uniform profiles under rotation in radial-flow chemical vapor deposition systems with planetary wafer rotation. This model-independent uniformity criterion is used to optimize film thickness uniformity in a representative CVD system; its applicability to other film deposition system design and optimization problems is discussed. (c) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码:829 / 837
页数:9
相关论文
共 11 条
[1]   Objects for MWR [J].
Adomaitis, RA .
COMPUTERS & CHEMICAL ENGINEERING, 2002, 26 (7-8) :981-998
[2]   High temperature CVD systems to grow GaN or SiC based structures [J].
Beccard, R ;
Schmitz, D ;
Woelk, EG ;
Strauch, G ;
Makarov, Y ;
Heuken, M ;
Deschler, M ;
Juergensen, H .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 :314-319
[3]   Heat transfer and mass transport in a multiwafer MOVPE reactor: Modelling and experimental studies [J].
Bergunde, T ;
Dauelsberg, M ;
Kadinski, L ;
Makarov, YN ;
Weyers, M ;
Schmitz, D ;
Strauch, G ;
Jurgensen, H .
JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) :66-71
[4]   SiC and GaN wide bandgap semiconductor materials and devices [J].
Burk, AA ;
O'Loughlin, MJ ;
Siergiej, RR ;
Agarwal, AK ;
Sriram, S ;
Clarke, RC ;
MacMillan, MF ;
Balakrishna, V ;
Brandt, CD .
SOLID-STATE ELECTRONICS, 1999, 43 (08) :1459-1464
[5]   Modeling and experimental verification of transport and deposition behavior during MOVPE of Ga1-xInxP in the Planetary Reactor [J].
Dauelsberg, M ;
Kadinski, L ;
Makarov, YN ;
Bergunde, T ;
Strauch, G ;
Weyers, M .
JOURNAL OF CRYSTAL GROWTH, 2000, 208 (1-4) :85-92
[6]   A NEW VERSATILE, LARGE SIZE MOVPE REACTOR [J].
FRIJLINK, PM .
JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :207-215
[7]   Fabrication of magnetic recording heads and dry etching of head materials [J].
Hsiao, R .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1999, 43 (1-2) :89-102
[8]  
JURGENSEN H, 1996, MRS INTERNET J NITRI, V1
[9]  
Oliver J., 2003, LLE REV, V94, P67
[10]  
PARIKH R, 2004, UNPUB REV GALLIUM NI