In situ monitoring of surface processes in plasma by coaxial impact-collision ion scattering spectroscopy

被引：0
|
作者：
Fujii, S [1 ]
Katayama, M [1 ]
Michishita, Y [1 ]
Oura, K [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn, Dept Elect Engn, Suita, Osaka 5650871, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 4A期
关键词：
ion scattering spectroscopy; plasma process; silicon; nitridation; CAICISS;
D O I：
10.1143/JJAP.44.1911
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrated in situ monitoring of surface processes in plasma, using coaxial impact-collision ion scattering spectroscopy (CAICISS) operable in a gas atmosphere, taking the plasma nitridation processes of Si surfaces with (I 11) and (001) faces as examples. From the results of real-time monitoring of CAICISS spectra, it was found that (1) the top layer of the Si(I 11) surface is readily nitrided even at room temperature, while the Si(001) surface requires thermal activation for its nitridation and that (2) at a high temperature, the nitridation of Si(001) proceeds to layers deeper than in the case of Si(l 11). [DOI: 10. 1 143/JJAP.44.1911].
引用
收藏
页码：1911 / 1914
页数：4
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