Growth Mechanism of Self-Catalyzed Group III-V Nanowires

被引：174

作者：

Mandl, Bernhard ^{[1
,2
]}

Stangl, Julian ^{[2
]}

Hilner, Emelie ^{[1
]}

Zakharov, Alexei A. ^{[3
]}

Hillerich, Karla ^{[1
]}

Dey, Anil W. ^{[4
]}

Samuelson, Lars ^{[1
]}

Bauer, Guenther ^{[2
]}

Deppert, Knut ^{[1
]}

Mikkelsen, Anders ^{[1
]}

机构：

[1] Lund Univ, S-22100 Lund, Sweden

[2] Johannes Kepler Univ Linz, Inst Solid State Semiconductor Phys, A-4040 Linz, Austria

[3] Lund Univ, Max Lab, S-22100 Lund, Sweden

[4] Lund Univ, Elect & Informat Technol Dept, S-22100 Lund, Sweden

来源：

NANO LETTERS | 2010年 / 10卷 / 11期

基金：

瑞典研究理事会;

关键词：

Nanowire; nanowire nucleation mechanism; nanowire growth mechanism; surface imaging and spectroscopy; INDIUM-PHOSPHIDE NANOWIRES; EPITAXIAL-GROWTH; PYROLYSIS;

D O I：

10.1021/nl1022699

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Group III-V nanowires offer the exciting possibility of epitaxial growth on a wide variety of substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free growth schemes are of particular relevance, to avoid impurities from the catalysts. While this type of growth is well-documented and some aspects are described, no detailed understanding of the nucleation and the growth mechanism has been developed. By combining a series of growth experiments using metal organic vapor phase epitaxy, as well as detailed in situ surface imaging and spectroscopy, we gain deeper insight into nucleation and growth of self-seeded III-V nanowires. By this mechanism most work available in literature concerning this field can be described.

引用

页码：4443 / 4449

页数：7

共 41 条

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