Role of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory

被引：481
作者：
Janousch, Markus [1 ]
Meijer, G. Ingmar
Staub, Urs
Delley, Bernard
Karg, Siegfried F.
Andreasson, Bjorn P.
机构：
[1] Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland
[2] IBM Corp, Zurich Res Lab, Res, CH-8803 Ruschlikon, Switzerland
来源：
ADVANCED MATERIALS | 2007年 / 19卷 / 17期
关键词：
D O I：
10.1002/adma.200602915
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Transition metal oxides exhibiting a bistable resistance state are attractive for nonvolatile memory applications. The relevance of oxygen vacancies for the resistance-change memory is investigated by X-ray fluorescence (see figure), infrared microscopy, and X-ray absorption spectroscopy using Cr-doped SrTiO3 as an example. The microscopic origin of resistance switching in this class of materials may be due to an oxygen-vacancy drift occurring in close proximity to one of the electrodes.
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页码：2232 / +
页数：5
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