Investigations on band commutativity at all oxide p-type NiO/n-type β-Ga2O3 heterojunction using photoelectron spectroscopy

被引：49

作者：

Ghosh, Sahadeb ^{[1
,2
]}

Baral, Madhusmita ^{[1
,2
]}

Kamparath, Rajiv ^{[3
]}

Singh, S. D. ^{[1
,2
]}

Ganguli, Tapas ^{[1
,2
]}

机构：

[1] Raja Ramanna Ctr Adv Technol, Synchrotrons Utilizat Sect, Indore 452013, Madhya Pradesh, India

[2] Homi Bhabha Natl Inst, Mumbai 400094, Maharashtra, India

[3] Raja Ramanna Ctr Adv Technol, Laser Technol Div, Indore 452013, Madhya Pradesh, India

来源：

APPLIED PHYSICS LETTERS | 2019年 / 115卷 / 25期

关键词：

ELECTRONIC-STRUCTURE; OPTICAL-PROPERTIES; THIN-FILM; OFFSET; ALIGNMENT; GROWTH; AL2O3; GA2O3;

D O I：

10.1063/1.5126150

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial growth of (111) oriented NiO layers on (-201) oriented beta-Ga2O3 and vice versa have been carried out to obtain an all oxide p-n heterojunction (HJ) consisting of NiO/beta-Ga2O3 and beta-Ga2O3/NiO interfaces, respectively. Careful investigations by minimizing the effect of differential charging phenomena during x-ray photoelectron spectroscopy measurements yield a valence band offset (VBO) value of 1.6 +/- 0.2 eV for both NiO/beta-Ga2O3 and beta-Ga2O3/NiO HJs. Thus, the VBO value is practically independent of the growth sequence for p-type NiO/n-type beta-Ga2O3 HJs and follows band commutativity. The band diagram shows a staggered (type-II) band alignment and the value of the conduction band offset is found to be small (0.3 +/- 0.2 eV). Our results are useful to design optoelectronic devices based on all oxide p-type NiO/n-type beta-Ga2O3 HJs.

引用

页数：5

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