Growth mode and properties of Mn-Co-Ni-O NTC thermistor thin films deposited on MgO (100) substrate by laser MBE

被引：5

作者：

Xie, Yahong ^{[1
,2
]}

Kong, Wenwen ^{[1
]}

Ji, Guang ^{[1
]}

Gao, Bo ^{[1
]}

Yao, Jincheng ^{[1
]}

Chang, Aimin ^{[1
,2
]}

机构：

[1] Xinjiang Tech Inst Phys & Chem CAS, Xinjiang Key Lab Elect Informat Mat & Devices, Key Lab Funct Mat & Devices Special Environm CAS, Urumqi 830011, Peoples R China

[2] Xinjiang Univ, Minist Educ & Xinjiang Uyghur Autonomous Reg, Key Lab Oil & Gas Fine Chem, Urumqi 830046, Peoples R China

来源：

MODERN PHYSICS LETTERS B | 2014年 / 28卷 / 30期

基金：

中国国家自然科学基金; 中国科学院西部之光基金;

关键词：

NTC thin film; laser MBE; MgO substrate; epitaxial growth; thermistor properties; OXYGEN PARTIAL-PRESSURE; MOLECULAR-BEAM EPITAXY; ELECTRICAL-PROPERTIES; THICKNESS; SRTIO3;

D O I：

10.1142/S0217984914502352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mn1.56Co0.96Ni0.48O4-delta thin films were deposited on MgO (100) substrate using laser molecular beam epitaxy (LMBE) technique at the temperature range of 300-600 degrees C under oxygen partial pressure of 5 x 10(-3) Pa. The effect of growth temperature on microstructure and electrical properties as well as the growth mode were studied using XRD, RHEED, AFM and resistance-temperature measurements. The results showed that all prepared thin films underwent epitaxial growth along the single-(100) orientation direction of the MgO substrate from 3D-island mode to 2D layer-by-layer mode, and exhibited good crystallinity and NTC thermistor behavior. Their resistance at room temperature can be in the range of 10-50 M Omega together with a B-value of about 3300 K, which are desirable for a wide range of practical applications of the NTC thermistors.

引用

页数：7

共 15 条

[1] Effect of oxygen partial pressure on the NTCR characteristics of sputtered NixMn3-xO4+δ thin films [J].