road vehicle radar;
low noise amplifiers;
field effect MIMIC;
CMOS integrated circuits;
millimetre wave receivers;
millimetre wave mixers;
millimetre wave amplifiers;
silicon;
elemental semiconductors;
automotive radar;
low local oscillator power level;
compact silicon area;
Rx front-end;
low-noise amplifier;
transformer-feedback technique;
double-balanced mixer;
transformer coupling;
LO-radio frequency isolation;
core silicon area;
TSMC complementary metal oxide semiconductor process;
CMOS receiver front-end;
power;
18;
0;
mW;
voltage;
1;
V;
frequency;
68;
9 GHz to 80;
2;
GHz;
noise figure 7;
8 dB to 9;
dB;
76;
0 GHz to 81;
size;
65;
nm;
gain;
6;
1 dB to 9;
165;
mm;
Si;
TRANSCEIVER;
DESIGN;
D O I:
10.1049/iet-cds.2018.5601
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
This study presents a 77 GHz receiver (Rx) front-end implemented in TSMC 65 nm complementary metal oxide semiconductor (CMOS) process for the application of automotive radar. This Rx front achieves high linearity, low noise figure (NF) and low local oscillator (LO) power level in compact silicon area. The Rx front-end includes a low-noise amplifier with transformer-feedback technique to improve the bandwidth and linearity, a balun, and a double-balanced mixer with transformer coupling. These techniques allow for compact design and high-linearity. The measurement results have demonstrated a conversion gain of 6.1-9.1 dB over the frequency range of 68.9-80.2 GHz, an NF of 7.8-9.1 dB over the range of 76-81 GHz, and LO-radio frequency isolation of 55-60 dB over 60-90 GHz. The input -1 dB compression point $\left({P_{1\, {\rm dB}}} \right)$P1dB is measured to be -16.8 dBm at 79 GHz. The core silicon area of the Rx front-end is 0.165 mm(2) excluding pads. The Rx front-end consumes 18 mW from a supply of 1.0 V.