Nonvolatile bipolar resistive switching behavior of epitaxial NdFeO3-PbTiO3 thin films grown on Nb:SrTiO3(001) substrate

被引：4
作者：
Gao, Cunxu [1 ]
Zhang, Peng [1 ]
Xu, Benhua [2 ,3 ]
Chen, Zhendong [1 ]
Qi, Lin [1 ]
Zhang, Chao [1 ]
Dong, Chunhui [1 ]
Jiang, Changjun [1 ]
Liu, Qingfang [1 ]
Xue, Desheng [1 ]
机构：
[1] Lanzhou Univ, Key Lab Magnetism & Magnet Mat MOE, Lanzhou 730000, Peoples R China
[2] Lanzhou Univ, Coll Chem & Chem Engn, Key Lab Nonferrous Met Chem & Resources Utilizat, Lanzhou 730000, Peoples R China
[3] Lanzhou Univ, Coll Chem & Chem Engn, State Key Lab Appl Organ Chem, Lanzhou 730000, Peoples R China
来源：
APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 05期
基金：
中国国家自然科学基金;
关键词：
MAGNETIC-PROPERTIES; RESISTANCE; MEMORIES; DEVICES; SRTIO3;
D O I：
10.7567/APEX.8.051102
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial NdFeO3-PbTiO3 (NFPTO) thin films were fabricated on Nb-SrTiO3(100) (NSTO) substrates of about 300 nm thickness by a sol-gel process. Nonvolatile bipolar resistive switching has been observed in the Pt/NFPTO/NSTO structure. The resistance ratio between the high-resistance state and the low-resistance state is about one order of magnitude. After degenerating for several minutes, each memory state is stably maintained and no further degradation occurs over 15000 s. X-ray photoelectron spectroscopy results suggest that the oxygen vacancies acting as trapping centers in the films play a significant role in the resistive switching mechanisms. Analysis of the current-voltage relationship demonstrates that the trap-controlled space-charge-limited current mechanism is of considerable importance to the resistance switching. (C) 2015 The Japan Society of Applied Physics
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页数：4
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