Influence of carrier recombination in the space charge region on minority carrier lifetime in the base region of solar cells

被引：4

作者：

Garrido, CL

Stolik, D

Rodriguez, J

Morales, A

机构：

[1] Univ La Habana, Fac Fis, Vedado 10400, Cuba

[2] Inst Politecn Nacl, CINVESTAV, Dept Ingn Elect, Mexico City 07000, DF, Mexico

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1999年 / 57卷 / 03期

关键词：

minority carrier lifetime; voltage decay; recombination;

D O I：

10.1016/S0927-0248(98)00174-3

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper the minority carrier lifetime (tau) in the base region of an n(+)/p silicon solar cell is calculated. The open circuit voltage decay method is employed. The influence of carrier recombination in the space charge region is considered through an interface recombination velocity, S-i. An analytical expression for tau is obtained and its value for one particular case is reported. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：239 / 247

页数：9

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