Influence of carrier recombination in the space charge region on minority carrier lifetime in the base region of solar cells

被引：4
作者：
Garrido, CL
Stolik, D
Rodriguez, J
Morales, A
机构：
[1] Univ La Habana, Fac Fis, Vedado 10400, Cuba
[2] Inst Politecn Nacl, CINVESTAV, Dept Ingn Elect, Mexico City 07000, DF, Mexico
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1999年 / 57卷 / 03期
关键词：
minority carrier lifetime; voltage decay; recombination;
D O I：
10.1016/S0927-0248(98)00174-3
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this paper the minority carrier lifetime (tau) in the base region of an n(+)/p silicon solar cell is calculated. The open circuit voltage decay method is employed. The influence of carrier recombination in the space charge region is considered through an interface recombination velocity, S-i. An analytical expression for tau is obtained and its value for one particular case is reported. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：239 / 247
页数：9
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