Frequency hopping due to acousto-electric interaction in ZnO based surface acoustic wave oscillator

被引：5

作者：

Dasgupta, Daipayan ^{[1
]}

Sreenivas, K. ^{[1
]}

机构：

[1] Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 110卷 / 04期

关键词：

Frequency hopping - Acoustic surface wave devices - Electric lines - Acoustic waves - II-VI semiconductors;

D O I：

10.1063/1.3622327

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A 36 MHz surface acoustic wave delay line based oscillator has been used to study the effect of acousto-electric interaction due to photo generated charge carriers in rf sputtered ZnO film under UV illumination (lambda = 365 nm, 20-100 mu W/cm(2)). Design aspects for developing a delay line based SAW oscillator are specified. The observed linear downshift in frequency (2.2 to 19.0 kHz) with varying UV intensity (20-100 mu W/cm(2)) is related to the fractional velocity change due to acousto-electric interaction. UV illumination level of 100 mu W/cm(2) leads to a characteristic frequency hopping behavior arising due to a change in the oscillation criteria, and is attributed to the complex interplay between the increased attenuation and velocity shift. (C) 2011 American Institute of Physics. [doi:10.1063/1.3622327]

引用

页数：8

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