Some features of current-voltage characteristics of irradiated GaP light diodes

被引：6
作者：
Litovchenko, P
Bisello, D
Litovchenko, A
Kanevskyj, S
Opilat, V
Pinkovska, M
Tartachnyk, V
Rando, R
Giubilato, P
Khomenkov, V
机构：
[1] NASU, Inst Nucl Res, UA-03028 Kiev, Ukraine
[2] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy
[3] Ist Nazl Fis Nucl, I-35131 Padua, Italy
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2005年 / 552卷 / 1-2期
关键词：
GaP; light diodes; negative resistance; injection; traps; cross-section; radiation; relaxation; disorder regions;
D O I：
10.1016/j.nima.2005.06.013
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Electrical characteristics of red and green GaP light diodes irradiated by fast electrons and neutrons were studied. It has been found that S-type current-voltage curves, measured in current generator mode at low-temperature, show presence of fine structure. The mechanism of negative differential resistance formation and influence of radiation on current transport and relaxation mechanisms have been studied. Estimation of the effective cross-section for electron capture by recombination levels and its changes under irradiation were obtained from experimental data. Detailed study of radiation modification of GaP light diode parameters makes it possible to propose these devices as high sensitive sensors of gamma rays and electrons. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：93 / 97
页数：5
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