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A 1/f Noise Upconversion Reduction Technique for Voltage-Biased RF CMOS Oscillators
被引:143
作者:
Shahmohammadi, Mina
[1
]
Babaie, Masoud
[1
]
Staszewski, Robert Bogdan
[2
,3
]
机构:
[1] Delft Univ Technol, Dept Elect Engn, NL-2628 CD Delft, Netherlands
[2] Univ Coll Dublin, Sch Elect & Elect Engn, Dublin 4, Ireland
[3] Delft Univ Technol, NL-2628 CD Delft, Netherlands
关键词:
Class-D oscillator;
class-F oscillator;
digitally controlled oscillator;
flicker noise;
flicker noise upconversion;
impulse sensitivity function (ISF);
phase noise (PN);
voltage-biased RF oscillator;
PHASE NOISE;
LC-OSCILLATOR;
PERFORMANCE;
IMPACT;
D O I:
10.1109/JSSC.2016.2602214
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
In this paper, we propose a method to reduce a flicker (1/f) noise upconversion in voltage-biased RF oscillators. Excited by a harmonically rich tank current, a typical oscillation voltage waveform is observed to have asymmetric rise and fall times due to even-order current harmonics flowing into the capacitive part, as it presents the lowest impedance path. The asymmetric oscillation waveform results in an effective impulse sensitivity function of a nonzero dc value, which facilitates the 1/f noise upconversion into the oscillator's 1/f(3) phase noise. We demonstrate that if the omega(0) tank exhibits an auxiliary resonance at 2 omega(0), thereby forcing this current harmonic to flow into the equivalent resistance of the 2 omega(0) resonance, then the oscillation waveform would be symmetric and the flicker noise upconversion would be largely suppressed. The auxiliary resonance is realized at no extra silicon area in both inductor-and transformer-based tanks by exploiting different behaviors of inductors and transformers in differential-and common-mode excitations. These tanks are ultimately employed in designing modified class-D and class-F oscillators in 40 nm CMOS technology. They exhibit an average flicker noise corner of less than 100 kHz.
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页码:2610 / 2624
页数:15
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