Scaling of Hydrogen-Terminated Diamond FETs to Sub-100-nm Gate Dimensions

被引：41

作者：

Moran, David A. J. ^{[1
]}

Fox, Oliver J. L. ^{[2
]}

McLelland, Helen ^{[1
]}

Russell, Stephen ^{[1
]}

May, Paul W. ^{[2
]}

机构：

[1] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland

[2] Univ Bristol, Sch Chem, Bristol BS8 1TS, Avon, England

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 05期

基金：

英国工程与自然科学研究理事会;

关键词：

Diamond; field-effect transistor (FET); hydrogen terminated; scaling; PERFORMANCE; GHZ;

D O I：

10.1109/LED.2011.2114871

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the dc operation of hydrogen-terminated diamond field-effect transistors (FETs) with gate lengths of 1 mu m to 50 nm. The 50-nm device metrics include a maximum drain current of 290 mA/mm and a peak extrinsic transconductance of 95 mS/mm. As the device gate length is reduced, peak intrinsic transconductance is increased substantially to a value of 650 mS/mm for the 50-nm device. A minimum I(on)/I(off) ratio of similar to 1.5 x 10(4) is maintained at this reduced gate dimension. These results appear highly promising for the improvement of hydrogen-terminated diamond FET high-frequency performance through reduction of the device gate length to sub-100-nm dimensions.

引用

页码：599 / 601

页数：3

共 9 条

[1] RF performance of surface channel diamond FETs with sub-micron gate length [J].

Aleksov, A ;

Denisenko, A ;

Spitzberg, U ;

Jenkins, T ;

Ebert, W ;

Kohn, E .

[2] Diamond power devices. Concepts and limits [J].

Denisenko, A ;

Kohn, E .

[3] High-performance p-channel diamond MOSFETs with alumina gate insulator [J].

Hirama, Kazuyuki ;

Takayanagi, Hidenori ;

Yamauchi, Shintaro ;

Jingu, Yoshikatsu ;

Umezawa, Hitoshi ;

Kawarada, Hiroshi .

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, :873-+

[4] 2W/mm output power density at 1 GHz for diamond FETs [J].

Kasu, M ;

Ueda, K ;

Ye, H ;

Yamauchi, Y ;

Sasaki, S ;

Makitnoto, T .

ELECTRONICS LETTERS, 2005, 41 (22) :1249-1250

[5] Gate interfacial layer in hydrogen-terminated diamond field-effect transistors [J].

Kasu, Makoto ;

Ueda, Kenji ;

Kageshima, Hiroyuki ;

Yamauchi, Yoshiharu .

[6] Over 20-GHz cutoff frequency submicrometer-gate diamond MISFETs [J].

Matsudaira, H ;

Miyamoto, S ;

Ishizaka, H ;

Umezawa, H ;

Kawarada, H .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (07) :480-482

[7] Bias-stress induced threshold voltage and drain current instability in 4H-SiC DMOSFETs [J].

Okayama, T. ;

Arthur, S. D. ;

Garrett, J. L. ;

Rao, M. V. .

SOLID-STATE ELECTRONICS, 2008, 52 (01) :164-170

[8] High-frequency performance of diamond field-effect transistor [J].

Taniuchi, H ;

Umezawa, H ;

Arima, T ;

Tachiki, M ;

Kawarada, H .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (08) :390-392

[9] Diamond FET using high-quality polycrystalline diamond with fT of 45 GHz and fmax of 120 GHz [J].

Ueda, K. ;

Kasu, M. ;

Yamauchi, Y. ;

Makimoto, T. ;

Schwitters, M. ;

Twitchen, D. J. ;

Scarsbrook, G. A. ;

Coe, S. E. .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (07) :570-572

← 1 →