Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44-360 nm: Photoemission assessments

被引：59

作者：

BenMoussa, A. ^{[1
]}

Hochedez, J. F. ^{[1
]}

Dahal, R. ^{[2
]}

Li, J. ^{[2
]}

Lin, J. Y. ^{[2
]}

Jiang, H. X. ^{[2
]}

Soltani, A. ^{[3
]}

De Jaeger, J. -C. ^{[3
]}

Kroth, U. ^{[4
]}

Richter, M. ^{[4
]}

机构：

[1] Observ Royal Belgique, Solar Terrestrial Ctr Excellence, B-1180 Brussels, Belgium

[2] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA

[3] IEMN, F-59652 Villeneuve Dascq, France

[4] Phys Tech Bundesanstalt, D-10587 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 02期

关键词：

D O I：

10.1063/1.2834701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The absolute responsivity of a metal-semiconductor-metal (MSM) photodiode based on high quality AlN material has been tested from the vacuum ultraviolet (vuv) to the near UV wavelength range (44-360 nm). The metal finger Schottky contacts have been processed to 2 mu m in width with spacing between the contacts of 4 mu m. In the vuv wavelength region, the measurement methodology is described in order to distinguish the contribution of the photoemission current from the internal diode signal. In the wavelength range of interest, AlN MSM is sensitive and stable under brief vuv irradiation. The MSM shows a 200/360 nm rejection ratio of more than four orders of magnitude and demonstrates the advantages of wide band gap material based detectors in terms of high rejection ratio and high output signal for vuv solar observation missions. (c) 2008 American Institute of Physics.

引用

页数：3

共 16 条

[1] Diamond detectors for LYRA, the solar VUV radiometer on board PROBA2 [J].

BenMoussa, A. ;

Hochedez, J. F. ;

Schuehle, U. ;

Schmutz, W. ;

Haenen, K. ;

Stockman, Y. ;

Soltani, A. ;

Scholze, F. ;

Kroth, U. ;

Mortet, V. ;

Theissen, A. ;

Laubis, C. ;

Richter, M. ;

Koller, S. ;

Defise, J. -M. ;

Koizumi, S. .

[2] Radiometric characteristics of new diamond PIN photodiodes [J].

BenMoussa, A. ;

Schuhle, U. ;

Scholze, F. ;

Kroth, U. ;

Haenen, K. ;

Saito, T. ;

Campos, J. ;

Koizumi, S. ;

Laubis, C. ;

Richter, M. ;

Mortet, V. ;

Theissen, A. ;

Hochedez, J. F. .

MEASUREMENT SCIENCE AND TECHNOLOGY, 2006, 17 (04) :913-917

[3] Deep-ultraviolet Al0.75Ga0.25N photodiodes with low cutoff wavelength [J].

Butun, S ;

Tut, T ;

Butun, B ;

Gokkavas, M ;

Yu, HB ;

Ozbay, E .

APPLIED PHYSICS LETTERS, 2006, 88 (12)

[4] Hybrid AIN-SiC deep ultraviolet schottky barrier photodetectors [J].

Dahal, R. ;

Al Tahtamouni, T. M. ;

Fan, Z. Y. ;

Lin, J. Y. ;

Jiang, H. X. .

APPLIED PHYSICS LETTERS, 2007, 90 (26)

[5] BLUE LEDS, UV PHOTODIODES AND HIGH-TEMPERATURE RECTIFIERS IN 6H-SIC [J].

EDMOND, JA ;

KONG, HS ;

CARTER, CH .

PHYSICA B-CONDENSED MATTER, 1993, 185 (1-4) :453-460

[6] BANDGAP DEPENDENCE AND RELATED FEATURES OF RADIATION IONIZATION ENERGIES IN SEMICONDUCTORS [J].

KLEIN, CA .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) :2029-+

[7] 200 nm deep ultraviolet photodetectors based on AlN [J].

Li, J. ;

Fan, Z. Y. ;

Dahal, R. ;

Nakarmi, M. L. ;

Lin, J. Y. ;

Jiang, H. X. .

APPLIED PHYSICS LETTERS, 2006, 89 (21)

[8] Visible-blindness in photoconductive and photovoltaic AlGaN ultraviolet detectors [J].

Monroy, E ;

Calle, F ;

Muñoz, E ;

Omnès, F ;

Beaumont, B ;

Gibart, P .

JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (03) :240-245

[9]

Motogaito A, 2002, MATER RES SOC SYMP P, V693, P761

[10] Source and detector calibration in the UV and VUV at BESSY II [J].

Richter, M ;

Hollandt, J ;

Kroth, U ;

Paustian, W ;

Rabus, H ;

Thornagel, R ;

Ulm, G .

METROLOGIA, 2003, 40 (01) :S107-S110

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