Spectroscopic Diagnostics of Defect and Interface Effects on Carrier Dynamics in Semiconductor Optoelectronics

被引：0

作者：

Scofield, A. C. ^{[1
]}

Hudson, A. I. ^{[1
]}

Liang, B. L. ^{[2
]}

Wells, N. P. ^{[1
]}

Huffaker, D. L. ^{[2
,3
]}

Lotshaw, W. T. ^{[1
]}

机构：

[1] Aerosp Corp, El Segundo, CA 90245 USA

[2] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA USA

[3] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90024 USA

来源：

ULTRAFAST BANDGAP PHOTONICS | 2016年 / 9835卷

关键词：

Steady-state photoluminescence; time-resolved photoluminescence; carrier relaxation; III-V defects; LIFETIME; GAAS;

D O I：

10.1117/12.2224308

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We use steady-state and time-resolved spectroscopy to evaluate optoelectronic material quality and obtain detailed information about carrier generation, transport, and relaxation in semiconductor devices and test structures. This report focuses on time-resolved and steady-state photoluminescence of III-V reference heterostructures at temperatures between 4K and 300K in order to investigate the mechanisms limiting carrier lifetime and to develop the capability to provide actionable feedback to R&D efforts for improvement and optimization of material properties and/or device performance. We combine the results of photoluminescence experiments with model-based analyses and simulations of carrier relaxation to assess the impacts of defects and interface quality on the relaxation dynamics of photo-generated carriers in double heterostructure test vehicles grown by MOCVD and MBE.

引用

页数：7

共 5 条

[1] ULTRALONG MINORITY-CARRIER LIFETIME EPITAXIAL GAAS BY PHOTON RECYCLING [J].