Preparation and characterization of TiN films by electron cyclotron resonance (ECR) sputtering for diffusion barrier applications

被引：22

作者：

Vargheese, KD

Rao, GM ^{[1
]}

Balasubramanian, TV

Kumar, S

机构：

[1] Indian Inst Sci, Dept Instrumentat, Bangalore 560012, Karnataka, India

[2] DMRL, Hyderabad, Andhra Pradesh, India

[3] CCCM, Hyderabad, Andhra Pradesh, India

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 83卷 / 1-3期

关键词：

TiN films; electron cyclotron resonance (ECR); diffusion barrier;

D O I：

10.1016/S0921-5107(01)00535-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An electron cyclotron resonance (ECR) plasma system has been used to deposit TiN films by reactive sputtering process. The effect of magnetic mirror field on the current-voltage characteristics of the cylindrical sputtering cathode has been studied. Stoichiometric TiN films with minimum stress and specific resistivity of 82 mu Omega cm and surface roughness of 3 Angstrom have been deposited at a substrate temperature of 350 degreesC. The films showed strong (2 0 0) orientation on Si(1 0 0), Si(1 1 1) and glass substrates. The use of TiN as a barrier layer in copper metalisation has been investigated. No detectable diffusion was observed up to a temperature of 700 degreesC for a film thickness of 600 Angstrom. The resistivity data is in conformity with the RES depth profiling. The quality of the films has been explained in terms of improved microstructure and packing density as a result of high-density ion bombardment. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：242 / 248

页数：7

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