Fabrication and characterization of an individual ZnO microwire-based UV photodetector

被引:43
作者
Chai, G. Y. [1 ]
Chow, L. [1 ,2 ,3 ]
Lupan, O. [1 ,4 ]
Rusu, E. [5 ]
Stratan, G. I. [5 ]
Heinrich, H. [1 ,2 ,3 ]
Ursaki, V. V. [6 ]
Tiginyanu, I. M. [5 ,7 ]
机构
[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA
[2] Univ Cent Florida, Dept Mech Mat & Aerosp Engn, Orlando, FL 32816 USA
[3] Univ Cent Florida, Adv Mat Proc & Anal Ctr, Orlando, FL 32816 USA
[4] Tech Univ Moldova, Dept Microelect & Semicond Devices, MD-2004 Kishinev, Moldova
[5] Moldavian Acad Sci, Inst Elect Engn & Ind Technol, Lab Nanotechnol, MD-2028 Kishinev, Moldova
[6] Moldavian Acad Sci, Inst Appl Phys, MD-2028 Kishinev, Moldova
[7] Tech Univ Moldova, Natl Ctr Mat Study & Testing, MD-2004 Kishinev, Moldova
关键词
ZnO microwire; Photodetector; Ultraviolet UV; radiation; HUMIDITY;
D O I
10.1016/j.solidstatesciences.2011.01.010
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
In this paper, a single ZnO microwire-based photodetector for the monitoring of ultraviolet (UV) radiation is described. Single crystal ZnO microwires were synthesized using a chemical vapor deposition (CVD) on the Si or Al2O3 substrate. The UV photodetector was fabricated by using in-situ lift-out method in a focused ion beam system to manipulate individual zinc oxide microwire. The photodetector prototype consists of a single ZnO microwire (20 mu m in length) and exhibits a response of similar to 10 mA/W for UV light (365 nm) under 1 V bias. The transient response measurements revealed relatively fast response. The effect of oxygen adsorption and of different relative humidity conditions on the electronic transport through individual microwire is explored and discussed. (C) 2011 Elsevier Masson SAS. All rights reserved.
引用
收藏
页码:1205 / 1210
页数:6
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