Temperature- and light-dependent photoconductivity studies of thermally evaporated WTe2 thin film for photodetection application

被引：3

作者：

Chauhan, Ishant ^{[1
]}

Kaur, Manjot ^{[1
]}

Singh, Kulwinder ^{[1
]}

Sharma, Ram K. ^{[2
]}

Vij, Ankush ^{[3
]}

Thakur, Anup ^{[4
]}

Kumar, Akshay ^{[1
]}

机构：

[1] Sri Guru Granth Sahib World Univ, Dept Nanotechnol, Adv Funct Mat Lab, Fatehgarh Sahib 140406, Punjab, India

[2] Univ Petr & Energy Studies UPES, Ctr Interdisciplinary Res, Dehra Dun 248007, Uttarakhand, India

[3] Univ Petr & Energy Studies UPES, Dept Phys, Dehra Dun 248007, Uttarakhand, India

[4] Punjabi Univ Patiala, Dept Basic & Appl Sci, Patiala 147002, Punjab, India

来源：

APPLIED NANOSCIENCE | 2022年 / 13卷 / 5期

关键词：

WTe2; Thin films; Thermal deposition; Photoconductivity; Carrier transport; Photodetection; PERSISTENT PHOTOCONDUCTIVITY; TRANSITION; MECHANISM; MODEL; MOS2; SE;

D O I：

10.1007/s13204-021-02076-z

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work, photo- and temperature-dependent electrical properties of thermally deposited WTe2 thin film have been reported. The n-type behaviour of WTe2 film of thickness similar to 122 nm has been observed. The dark conductivity analysis revealed that thermally activated conduction mechanism is responsible for charge carrier transport. In the presence of light, WTe2 shows higher current than dark conditions response towards light with two activation energies of similar to 0.374 eV and 0.692 eV signifying the dominance of bimolecular recombination under light illumination. On-off cycle determined the respective current variation with different light intensities. The fabricated device possesses responsivity similar to 0.36 mA/W and detectivity of similar to 3.2 x 10(9) Jones.

引用

页码：3225 / 3232

页数：8

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