Characteristics of transparent conducting Al-doped ZnO films prepared by dc magnetron sputtering

被引：29
作者：
Jung, Sung-Mok [1 ,2 ,3 ]
Kim, Young-Hwan [1 ]
Kim, Seong-Il [1 ]
Yoo, Sang-Im [2 ,3 ]
机构：
[1] Korea Inst Sci & Technol, Nanomat Ctr, Seoul 136791, South Korea
[2] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea
[3] Seoul Natl Univ, RIAM, Seoul 151744, South Korea
来源：
CURRENT APPLIED PHYSICS | 2011年 / 11卷 / 01期
关键词：
Al-doped ZnO; Substrate temperature; Oxygen partial pressure; DC magnetron sputtering; PULSED-LASER DEPOSITION; OXIDE THIN-FILMS; CHEMICAL-VAPOR-DEPOSITION; ZINC-OXIDE; SUBSTRATE-TEMPERATURE; OPTICAL-PROPERTIES; SPRAY-PYROLYSIS; GA; RF;
D O I：
10.1016/j.cap.2010.11.101
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Al-doped ZnO (AZO) films were deposited on soda-lime glass substrates by using dc magnetron sputtering as a function of argon gas pressure, O-2/Ar gas ratio and substrate temperature, and their electrical and optical properties were investigated. As a result, the resistivity of the AZO films decreased with decreasing argon gas pressure or O-2/Ar gas ratio. However, the lowest resistivity could be obtained at the substrate temperatures of 250 degrees C. The higher substrate temperature increased the resistivity a little. The transmittance was found to be very sensitive to O-2/Ar gas ratio and substrate temperature. Addition of a very small amount of oxygen to argon (1.23% of O-2/Ar ratio) or slight increase of the substrate temperature from room temperature to 150 degrees C enhanced the transmittance in visible region remarkably. Conclusively, the AZO films with low resistivity of order of 10(-4) Omega cm and high transparency in visible region could be prepared at the substrate temperatures of above 150 degrees C (the lowest resistivity of 3.19 x 10(-4) Omega cm at 250 degrees C) by dc magnetron sputtering and these films are applicable to various fields which require transparent conducting oxide films. (c) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：S191 / S196
页数：6
相关论文
共 22 条
[1]   Transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering at low temperature [J].
Bie, X. ;
Lu, J. G. ;
Gong, L. ;
Lin, L. ;
Zhao, B. H. ;
Ye, Z. Z. .
APPLIED SURFACE SCIENCE, 2009, 256 (01) :289-293
[2]   ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].
BURSTEIN, E .
PHYSICAL REVIEW, 1954, 93 (03) :632-633
[3]   Electrical and optical studies of ZnO:Ga thin films fabricated via the sol-gel technique [J].
Cheong, KY ;
Muti, N ;
Ramanan, SR .
THIN SOLID FILMS, 2002, 410 (1-2) :142-146
[4]   OPTICAL AND ELECTRICAL-PROPERTIES OF GA2O3-DOPED ZNO FILMS PREPARED BY R.F. SPUTTERING [J].
CHOI, BH ;
IM, HB ;
SONG, JS ;
YOON, KH .
THIN SOLID FILMS, 1990, 193 (1-2) :712-720
[5]   INFLUENCE OF DISCHARGE PARAMETERS ON THE LAYER PROPERTIES OF REACTIVE MAGNETRON-SPUTTERED ZNO-AL FILMS [J].
ELLMER, K ;
KUDELLA, F ;
MIENTUS, R ;
SCHIECK, R ;
FIECHTER, S .
THIN SOLID FILMS, 1994, 247 (01) :15-23
[6]   Preparation and characteristic of ZnO thin film with high and low resistivity for an application of solar cell [J].
Jeong, WJ ;
Kim, SK ;
Park, GC .
THIN SOLID FILMS, 2006, 506 :180-183
[7]   MOCVD of pure and Ga-doped epitaxial ZnO [J].
Kaul, AR ;
Gorbenko, OY ;
Botev, AN ;
Burova, LI .
SUPERLATTICES AND MICROSTRUCTURES, 2005, 38 (4-6) :272-282
[8]   Effect of aluminum doping on zinc oxide thin films grown by pulsed laser deposition for organic light-emitting devices [J].
Kim, H ;
Piqué, A ;
Horwitz, JS ;
Murata, H ;
Kafafi, ZH ;
Gilmore, CM ;
Chrisey, DB .
THIN SOLID FILMS, 2000, 377 (377-378) :798-802
[9]   Comparative material study on RF and DC magnetron sputtered ZnO:Al films [J].
Kluth, O ;
Schöpe, G ;
Rech, B ;
Menner, R ;
Oertel, M ;
Orgassa, K ;
Schock, HW .
THIN SOLID FILMS, 2006, 502 (1-2) :311-316
[10]   Modified Thornton model for magnetron sputtered zinc oxide:: film structure and etching behaviour [J].
Kluth, O ;
Schöpe, G ;
Hüpkes, J ;
Agashe, C ;
Müller, J ;
Rech, B .
THIN SOLID FILMS, 2003, 442 (1-2) :80-85
123