Reexamination of SRAM Cell Write Margin Definitions in View of Predicting the Distribution

被引：45

作者：

Makino, Hiroshi ^{[1
]}

Nakata, Shunji ^{[2
]}

Suzuki, Hirotsugu ^{[3
]}

Mutoh, Shin'ichiro ^{[2
]}

Miyama, Masayuki ^{[3
]}

Yoshimura, Tsutomu ^{[4
]}

Iwade, Shuhei ^{[1
]}

Matsuda, Yoshio ^{[3
]}

机构：

[1] Osaka Inst Technol, Fac Informat Sci & Technol, Hirakata, Osaka 5730196, Japan

[2] NTT Corp, NTT Microsyst Integrat Labs, Atsugi, Kanagawa 2430198, Japan

[3] Kanazawa Univ, Grad Sch Nat Sci, Kanazawa, Ishikawa 9201192, Japan

[4] Osaka Inst Technol, Fac Engn, Osaka 5358585, Japan

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2011年 / 58卷 / 04期

关键词：

Static random access memory (SRAM); variance; Vth fluctuation; write margin (WM); WM distribution;

D O I：

10.1109/TCSII.2011.2124531

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Four definitions of static random access memory (SRAM) cell write margins (WMs) were reexamined by analyzing the dependence of the WM on the SRAM cell transistor threshold voltages (Vth's) in order to find a preferable definition. The WM is expected to obey the normal distribution if the differential coefficients of the WM to Vth's are constant over a wide range of Vth variations. This means that the write yield can be easily predicted by a small number of measured samples. Using SPICE in 45-nm technology, we examined which definition had Vth linearity, as well as giving an accurate write limit. The distribution predicted from the linearity was verified by the Monte Carlo simulation. As a result, the definition proposed by Gierczynski et al. was found to be the most suitable definition for predicting the distribution and the write yield.

引用

页码：230 / 234

页数：5

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