Emulation of spike-timing dependent plasticity in nano-scale phase change memory

被引:18
作者
Kang, Dae-Hwan [1 ]
Jun, Hyun-Goo [1 ]
Ryoo, Kyung-Chang [1 ]
Jeong, Hongsik [2 ]
Sohn, Hyunchul [3 ]
机构
[1] Samsung Elect Co Ltd, Semicond Business, Memory Div, Hwaseong Si 445330, Gyeonggi Do, South Korea
[2] Yonsei Univ, Yonsei Inst Convergence Technol, Inchon 406840, South Korea
[3] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
关键词
Spike-timing dependent plasticity; Two-phase change memory cells; Long-term potentiation; Long-term depression; Electronic synapses;
D O I
10.1016/j.neucom.2014.12.036
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
The spike-timing dependent plasticity (STDP) of biological synapses, which is known to be a function of the formulated Hebbian learning rule of human cognition, learning and memory abilities, was emulated with two-phase change memory (2-PCM) cells built with 39 nm technology. For this, we designed a novel time-modulated voltage (TMV) scheme for changing the conductance of 2-PCM cells, that could produce both long-term potentiation (LTP) and long-term depression (LTD) by applying variable (decreasing/increasing) pulse voltages according to the sign and magnitude in time interval between pre- and post-spikes. Since such schemes can be easily modified to have a variety of pulse shapes and time intervals between pulses, it is expected to be a proper scheme for designing diverse synaptic connection abilities. In addition, the small form factor and low energy consumption of 2-PCM make them comparable to biological synapses, which makes phase change memory a promising candidate for electronic synapses in large-scale neuromorphic system applications. (C) 2015 The Authors. Published by Elsevier B.V.
引用
收藏
页码:153 / 158
页数:6
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