AC Plasma Induced Modifications in Sb2S3 Thin Films

被引：2

作者：

Calixto-Rodriguez, M.

Castillo, F. ^{[1
]}

Martinez, H.

Pena, Y. ^{[2
]}

Sanchez-Juarez, A. ^{[3
]}

机构：

[1] Univ Nacl Autonoma Mexico, Inst Ciencias Nucl, Cuernavaca 40510, Morelos, Mexico

[2] Univ Autonoma Nuevo Leon, Fac Ciencias Quimicas, San Nicolas de los Garza, Mexico

[3] Univ Nacl Autonoma Mexico, Ctr Investigac Energia, Morelos 62580, Mexico

来源：

THIRD INTERNATIONAL WORKSHOP AND SUMMER SCHOOL ON PLASMA PHYSICS 2008 | 2010年 / 207卷

关键词：

DEPOSITION;

D O I：

10.1088/1742-6596/207/1/012019

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sb2S3 thin films, deposited by the chemical bath deposition method, were treated with N-2 plasma at 3.0 Torr during several minutes. The as-prepared Sb2S3 thin films and films treated with N-2 plasma have been characterized using several techniques. X-ray diffraction studies have shown that plasma treatment induced recrystallization on the as-prepared Sb2S3 thin films. The band gap values decreased from 2.37 to 1.82 eV after plasma treatment, and the electrical conductivity increased from 10(-9) to 10(-7) (Omega cm)(-1) due to the annealing effect.

引用

页数：4

共 13 条

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